ST sts1hnc60 free download

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STS1HNC60 N-CHANNEL 600V - 7 - 0.4A SO-8 PowerMeshTMII MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STS1HNC60 600 V <8 0.36 A s TYPICAL RDS(on) = 7 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED SO-8 DESCRIPTION Using the latest high voltage MESH OVERLAYTMII process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company's proprietary edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s SWITCH MODE LOW POWER SUPPIES (SMPS) s CFL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage