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2SC5343(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector power dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A DC current gain hFE VCE=6V,IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.1 0.25 V Transition frequency fT VCE=10V,IC=1mA 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF VCE=6V,Ic=0.1mA, Noise figure NF 10 dB