LGE 2sd1899-z free download

File name 2sd1899-z.pdf

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 10 A Emitter cut-off current IEBO VEB=7V,IC=0 10 A hFE(1) VCE=2V,IC=200mA 60 DC current gain hFE(2) VCE=2V,IC=600mA 100 400 hFE(3) VCE=2V,IC=2A 50 Collector-emitter saturation voltage VCE(sat) IC=1.5A,IB=150mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=1.5A,IB=150mA 1.2 V Transition frequency fT VCE=5V,IC=1.5A