Philips bf1206 free download

File name bf1206.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 drain (b) Superior cross-modulation performance during AGC 2 source High forward transfer admittance 3 gate 1 (b) High forward transfer admittance to input capacitance 4 gate 1 (a) ratio. 5 gate 2 6 drain (a) APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and handbook, halfpage d (a) g2 g1 (a) analog television tuners. 6 5 4 DESCRIPTION AMP a The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. AMP The source and substrate are interconnected. Internal bias b circuits enable DC stabilization and a very good 1 2 3 cross-modulation performance during AGC. Integrated Top view diodes between the gates and source protect against d (b) s g1 (b) MAM480 excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package.