HT Semiconductor ss8550b free download

File name ss8550b.pdf

SS8 550 TRANSISTOR(PNP) SOT-323 FEATURES Complimentary to SS8050 MARKING: Y2 1. Base 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V Base-emitter positive favor voltage VBEF IB=-1A -1.55 V VC