LGE m8050 to-92 free download

File name m8050_to-92.pdf

M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 A hFE(1) VCE=1V, IC=5mA 45 DC current gain hFE(2) VCE=1V, IC=100mA 80 400 hFE(3) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V Transition frequency fT VCE=6V, IC= 20mA , f=30MHz 150 MHz * Pulse Test : pulse width 300