LGE 2sd596 sot-23-3l free download

File name 2sd596_sot-23-3l.pdf

2SD596 SOT-23-3L Transistor(NPN) 1.BASE SOT-23-3L 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 700 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V Collector cut-off current ICBO VCB=30V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A hFE(1)* VCE= 1V, IC= 100mA 110 400 DC current gain hFE(2)* VCE=1