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HD1530JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Features Figure 1. Package STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION Applications 3 2 HORIZONTAL DEFLECTION OUTPUT FOR 1 DIGITAL TV, HDTV, AND HIGH -END TO-264 MONITORS Description Figure 2. Internal Schematic Diagram The device uses a Diffused Collector in Planar technology which adopts "Enhanced High Voltage Structure" (EHVS1) that was developed to fit High-Definition CRT displays. The new HD product series features improved silicon efficiency, bringing updated performance to Horizontal Deflection output stages. Table 1. Order Codes Part Number Marking Package Packing HD1530JL HD1530JL TO-264 TUBE rev.1 July 2005 1/5 www.st.com 5 HD1530JL Table 2. Absolute Maximum Rating Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1500 V VCEO Collector-Emitter Voltage (IB = 0) 700 V VEBO Emitte-Base Voltage (IC = 0) 10 V IC Collector Current 26 A ICM Collector Peak Current (tP < 5ms) 40 A IB Base Current 10 A IBM Base Peak Current (tP < 5ms) 20