LGE 2sa1162 sot-23 free download

File name 2sa1162_sot-23.pdf

2SA1162 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A DC current gain hFE VCE=-6V,IC=-2mA 70 400 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V Transition frequency fT VCE=-10V,IC=-1mA 80 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF VCE=-6V,IC=0.1mA,f=1KHz, Noise figure NF 10 dB Rg=10K CLASSIFICATION OF hFE Rank O Y GR(G) Range 70-140