LGE s9014 to-92 free download

File name s9014_to-92.pdf

S9014(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 A Collector cut-off current ICEO VCE=35V, IB=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A DC current gain hFE VCE=5V, IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1 V VCE=5V, IC= 10mA Transition frequency fT 150 MHz f=30MHz CLASSIFICATION OF hFE(1) Rank A B C D Range 60-150 100-300 200-600 400-1000