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Descr: . Electronic Components Datasheets Active components Transistors LGE pzta44.pdf
Group:Electronics > Components > Transistors
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PZTA44 SOT-223 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features Low current : 300mA(max) High voltage: VCEO=400V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 300 mA PC Collector Power Dissipation 1000 mW Tj Junction Temperature 150 Tstg Storage Temperature -65-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 500 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 6 V Collector cut-off current ICBO VCB=400V,IE=0 0.1 A Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A hFE(1) VCE=10V,IC=1mA 40 hFE(2) VCE=10V,IC=10mA 50 200 DC current gain hFE(3) VCE=10V,IC=50mA 45 hFE(4) VCE=10V,IC=100mA 40 VCE(sat) IC=1mA,IB=0.1mA 0.4 V Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V VCE(sat) IC=50mA,IB=5mA 0.75 V Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 0.85 V Transition frequency fT VCE=10V,IC=10mA,f=100MHz 20 MHz Collector capacitance CC VCB=20V,IE=0,f=1

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