LGE c1815 to-92 free download

File name c1815_to-92.pdf

C1815 Transistor(NPN) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW Tj Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100uA, IC=0 5 V Collector cut-off current ICBO VCB= 60V,IE=0 0.1 uA Collector cut-off current ICEO VCE= 50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 uA DC current gain hFE VCE= 6 V, IC= 2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V VCE=10 V, IC= 1mA Transition frequency fT 80 MHz