LGE ktc3195 free download

File name ktc3195.pdf

KTC3195 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 123 3. BASE Features Small reverse transfer capacitance Cre=0.7pF(Typ) Low noise Figure: NF=2.5dB(Typ.) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V Collector cut-off current ICBO VCB=40V, IE=0 0.5 A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A DC current gain hFE(1) VCE=6V, IC=1mA 40 200 Transition frequency fT VCE=6V, IC=1mA 300 550 MHz Reverse Transfer capacitance Cre VCB=6V, IE=0, f=1MHz 0.7 pF Noise figure NF 2.5 5 dB VCE=6V, IC=1mA,f=100MHZ Power Gain Gpe 18 dB CLASSIFICATION OF hFE(1) Rank R O Y Range