ST sts15n4llf3 free download

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STS15N4LLF3 N-channel 40V - 0.0042 - 15A - SO-8 STripFETTM Power MOSFET General features Type VDSS RDS(on) ID STS15N4LLF3 40V <0.005 15A Optimal RDS(on)x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced SO-8 Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows Internal schematic diagram extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. Applications Switching application Order codes Part number Marking Package Packaging STS15N4LLF3 15N4LL- SO-8 Tape & reel November 2006 Rev 2 1/12 www.st.com 12 Contents STS15N4LLF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS15N4LLF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximim ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate-source voltage