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2SD1577 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA TOP-3Fa SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 3 A ICM Collector current peak value - 6 A Ptot Total power dissipation Tmb 25 - 40 W VCEsat Collector-emitter saturation voltage IC = 3.0A; IB =0.8A - 5 V Icsat Collector saturation current f = 16KHz - A VF Diode forward voltage V tf Fall time ICsat = 3.0A; f = 16KHz 1.0 s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 3 A ICM Collector current peak value - 6 A IB Base current (DC) - A IBM Base current peak value - A Ptot Total power dissipation Tmb 25 - 40 W Tstg Storage temperature -65 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICE Collector cut-off current VBE = 0V; VCE = VCESMmax - 1.0 mA ICES