HT Semiconductor 2sb1189 free download

File name 2sb1189.pdf

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A DC current gain hFE VCE=-3V,IC=-100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.4 V Transition frequency fT VCE=-10V,IC=-50mA,f=100MHz 100 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking BDP BDQ BDR 1 JinYu www.htsemi.com semiconductor Date:2011/05 2SB1 1 8 9 Typical Characteristics 2SB1189 2 JinYu www.htsemi.com semiconductor