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File name:2sk1365.pdf
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Mfg:Toshiba
Model:2sk1365 🔎
Original:2sk1365 🔎
Descr: . Electronic Components Datasheets Active components Transistors Toshiba 2sk1365.pdf
Group:Electronics > Components > Transistors
Uploaded:04-06-2020
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2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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