File information: | |
File name: | 2sk1365.pdf [preview 2sk1365] |
Size: | 398 kB |
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Mfg: | Toshiba |
Model: | 2sk1365 🔎 |
Original: | 2sk1365 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Toshiba 2sk1365.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 04-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
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Decompress result: | OK | |
Extracted files: | 1 | |
File name 2sk1365.pdf 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 |
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