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BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON CONFIGURATION s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL 3 EQUIPMENT 2 1 DESCRIPTION The BDX53F is a silicon epitaxial-base NPN TO-220 power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP types is BDX54F. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDX53F PNP BDX54F V CBO Collector-Base Voltage (I E = 0) 160 V V CEO Collector-Emitter Voltage (I B = 0) 160 V V EBO Emitter-base Voltage (I C = 0) 5 V IC Collector Current 8 A I CM Collector Peak Current 12 A IB Base Current 0.2 A P tot Total Dissipation at T c 25 C o 60 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C July 1997 1/4 BDX53F / BDX54F THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 2.08 C/W