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Descr: . Electronic Components Datasheets Active components Transistors ST stl9nk30z.pdf
Group:Electronics > Components > Transistors
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STL9NK30Z N-CHANNEL 300V - 0.36 - 9A PowerFLATTM Zener-Protected SuperMESHTMPower MOSFET TYPE VDSS RDS(on) ID (1) Pw (1) STL9NK30Z 300 V < 0.4 9A 75 W s TYPICAL RDS(on) = 0.36 s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s) s VERY GOOD MANUFACTURING PowerFLATTM(5x5) t( REPEATIBILITY (Chip Scale Package) d uc ro DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip- P based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is tak- le te INTERNAL SCHEMATIC DIAGRAM so en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- Ob ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products. - APPLICATIONS s LIGHTING ct (s) du s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC o e Pr o let O bs ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STL9NK30Z L9NK30Z PowerFLATTM (5x5) TAPE & REEL August 2002 1/8 STL9NK30Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 300 V VDGR Drain-gate Voltage (RGS = 20 k) 300 V VGS Gate- source Voltage

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