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Descr: . Electronic Components Datasheets Active components Transistors Wietron bss138.pdf
Group:Electronics > Components > Transistors
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BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 1 3 *Low On-Resistance : 3.5 GATE 1 *Low Input Capacitance: 40PF 2 *Low Out put Capacitance : 12PF 2 *Low Threshole :1 .5V SOURCE *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGS _ +20 V Continuous Drain Current (TA=25 C) ID 200 mA Pulsed Drain Current(tp 10us) IDM 800 mA Power Dissipation (TA=25 C) PD 225 mW Maximax Junction-to-Ambient RJA 556 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking BSS138=J1 WEITRON http://www.weitron.com.tw BSS138 Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage V(BR)DSS V VGS=0V, ID=250 A 50 - - Gate-Source Threshold Voltage VGS (th) VDS=VGS, ID=1.0mA 0.5 - 1.5 V Gate-Source Leakage Current IGSS + uA + VDS=0V, VGS= -20V - - -0.1 Zero Gate Voltage Drain Current VDS=25V, VGS=0V IDSS - - 0.1 A VDS=50V, VGS=0V 0.5 Drain-Source On-Resistance VGS=2.75V, ID < 200mA, TA=-40 C to + 85 C rDS (on) - 5.6 10 VGS=5.0V, ID=200mA - - 3.5 Forward Transconductance gfs 100 - - mS VDS=25V, ID=200mA, f=1.0KHZ Dynamic Input Capacitance Ciss 40 V

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