ST stp9nb50-fp free download

File name stp9nb50-fp.pdf

STP9NB50 STP9NB50FP N-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FP PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STP9NB50 500 V < 0.85 8.6 A STP9NB50FP 500 V < 0.85 4.9 A s TYPICAL RDS(on) = 0.75 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 s VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 s GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM t( s) uc process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding d ro performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest R DS(on) per area, P te exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. le APPLICATIONS so Ob s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING - (s) EQUIPMENT AND UNINTERRUPTIBLE ct POWER SUPPLIES AND MOTOR DRIVE du ABSOLUTE MAXIMUM RATINGS Symbol o Parameter Value Unit VDS