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BD336 SILICON PNP POWER DARLINGTON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s PNP DARLINGTON s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS 3 DESCRIPTION 2 1 The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 plastic package. SOT-82 It is inteded for use in audio output stages general amplifier and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -100 V V CEO Collector-Emitter Voltage (I B = 0) -100 V V EBO Emitter-Base Voltage (I C = 0) -5 V IC Collector Current -6 A I CM Collector Peak Current (t p < 10ms) -10 A IB Base Current -0.15 A P tot Total Dissipation at T c 25 o C 60 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C July 1997 1/4 BD336 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 2.08 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = -100 V -0.2 mA o Current (I E = 0) V CB = -100 V T C = 150 C -2 mA I CEO Collector Cut-off V CE = -50 V -0.5 mA Current (I B = 0) I EBO Emitter Cut-off Current V EB = -5 V