Samsung ksc5338d free download

File name ksc5338d.pdf

KSC5338D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION z Wide S.O.A. z Built-in Free-wheel Diode z Suitable for ballast App;ication z Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 V Internal schematic diagram Emitter Base Voltage VEBO 9 V C (2) Collector Current DC IC 5 A *Pulse ICP 10 A Base Current DC IB 2 A *Pulse IBP 4 A (1) Power Dissipation(Tc=25 )& PC 75 W Junction Temperature TJ 150 & B Storage Temperature T STG -55 ~ 150 & ELECTRICAL CHARACTERISTICS (T C=25&) E (3) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO ~ IC=1 , IE=0 1000 - - V Collector Emitter Breakdown Voltage BVCEO ~ IC=5 , IB=0 450 - - V Emitter Cutoff Current BVEBO ~ IE=1 , IC=0 12 - - V Collextor Cutoff Current ICBO VCB=800V, IE=0 - - 10 } Emitter Cutoff Current IEBO VEB = 9V, IC = 0 - - 10 } DC Current Gain hFE1 VCE=1V, IC=0.8A 15 - - hFE2 VCE=1V,IC=2A 6 - - Collector Emitter Saturation Voltage VCE(sat) IC=0.8A, IB=0.08A - -