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STL160N3LLH6 N-channel 30 V, 0.0011 35 A PowerFLATTM (5x6) , STripFETTM VI DeepGATETM Power MOSFET Features RDS(on) Order code VDSS ID max STL160N3LLH6 30 V 0.0013 35 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLATTM ( 5x6 ) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description The STL160N3LLH6 is a N-channel 30 V Power MOSFET. This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STL160N3LLH6 160N3LLH6 PowerFLATTM (5x6) Tape and reel November 2010 Doc ID 18223 Rev 1 1/14 www.st.com 14 Contents STL160N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Doc ID 18223 Rev 1 STL160N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage