Secos ssrf4n60 free download

File name ssrf4n60.pdf

SSRF4N60 4A , 600 V , RDS(ON) 2.4 Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of "-C" specifies halogen and lead-free DESCRIPTION The N-Channel MOSFET is used an advanced termination ITO-220 scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has B N been especially tailored to minimize on-state resistance, provide D superior switching performance. This device is well suited for high E efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. M A FEATURES Robust high voltage termination Avalanche energy specified H J C Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. 2 K G Drain L L F Millimeter Millimeter 1 REF. Min. Max. REF. Min. Max. Gate A 14.60 15.70 H 2.70 3.80 B 9.50 10.50 J 0.90 1.50