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2STA1943 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STA1943 2STA1943 TO-264 Tube December 2007 Rev 2 1/9 www.st.com 9 Electrical ratings 2STA1943 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -230 V VCEO Collector-emitter voltage (IB = 0) -230 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -15 A ICM Collector peak current -30 A Ptot Total dissipation at TC = 25