ST stl85n6f3 free download

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STL85N6F3 N-channel 60 V, 0.005 , 19 A PowerFLATTM (6x5) STripFETTM Power MOSFET Preliminary Data Features RDS(on) Type VDSS ID max STL85N6F3 60 V < 0.0057 19 A (1) 1. The value is rated according Rthj-pcb Extremely low on-resistance RDS(on) 100% avalanche tested PowerFLATTM (6x5) Application Switching applications Description Figure 1. Internal schematic diagram This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature size" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STL85N6F3 85N6F3 PowerFLATTM (6x5) Tape and reel January 2009 Rev 1 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Contents STL85N6F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 STL85N6F3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0)