Wietron 2sb1132 free download

File name 2sb1132.pdf

2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25% ) C Rating Symbol Value Unit Collector-Emitter Voltage VCBO -40 Vdc Collector-Base Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -1.0 A(DC) Collector Current ICP -2.0 A (Pulse)* Collector Power Dissipation PC 0.5 W Junction Temperature, Storage Temperature T j , Tstg 150, -55 to +150 % C * Single pulse Pw = 100ms DEVICE MARKING 2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0) V(BR)CBO -40 - Vdc Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0) V(BR)CEO -32 - Vdc Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC =0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB= -20Vdc, IE=0) ICBO - -0.5 uAdc Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0) IEBO - -0.5 uAdc WEITRON http://www.weitron.com.tw 2SB1132 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Curre