LGE ktd1304 free download

File name ktd1304.pdf

KTD1304 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3.COLLECTOR Features High emitter-base voltage:VEBO=12V(Min) low on resistance:Ron=0.6(max)(IB=1mA) MARKING: MAX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 12 V Collector cut-off current ICBO VCB=25 V, IE=0 0.1 A Emitter cut-off current IEBO VEB=12V, IC=0 0.1 A hFE(FOR) VCE=2V, IC=4 mA 200 1000 DC current gain hFE(REV) VCE= 2V, IC= 4mA 20 Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10 mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=10mA 1 V VCE=10V, IC= 1mA Transition frequency fT 60 MHz f=100MHz output capacitance Cob VCB=10V,IE=0,f=1M