LGE bc807w free download

File name bc807w.pdf

BC807-16W BC807-25W BC807-40W SOT-323 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-323 Features Ldeally suited for automatic insertion epitaxial planar die construction complementary to BC817W MARKING: 16W:5A; 25W:5B; 40W:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10A, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE= -1A, IC=0 -5 V Collector cut-off current ICBO VCB= -20 V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.2 A Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 A 100 250 DC current gain 807-16W hFE(1) VCE= -1V, IC= -100mA 160 400 807-25W 250 600 807-40W hFE(2) VCE= -1V, IC= -500mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50 mA -0.7 V Base-emitter voltage