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Model:bu1706a 🔎
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Descr: . Electronic Components Datasheets Active components Transistors Philips bu1706a.pdf
Group:Electronics > Components > Transistors
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1750 V VCEO Collector-emitter voltage (open base) - 850 V IC Collector current (DC) - 5 A ICM Collector current peak value - 8 A Ptot Total power dissipation Tmb 25

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