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2SB1 38 6 TRANSISTOR(PNP) FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 A DC current gain hFE VCE=-2V,IC=-500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-4A,IB=-100mA -1 V Transition frequency fT VCE=-6V,IC=-50mA,f=30MHz 120 MHz Collector output capacitance Cob VCB=-20V,IE=0,f=1MHz 60 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking BHP BHQ BHR 1 JinYu www.htsemi.com semiconductor Date:2011/05 2SB1 38 6 Typical Characteristics 2 JinYu www.htsemi.com semiconductor Date:2011/05 2SB1 38 6