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Now downloading free:LGE bcw61b sot-23

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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors LGE bcw61b_sot-23.pdf
Group:Electronics > Components > Transistors
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BCW61B SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Emitter Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A Pc Collector Power dissipation 0.25 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10A, IE=0 -32 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off current ICBO VCB=-32V, IE=0 -0.02 A Collector cut-off current IEBO VEB=-4V, IC=0 -0.02 A hFE1 VCE=-5V, IC= -10A 30 DC current gain hFE2 VCE=-5V, IC= -2mA 180 310 hFE3 VCE=-1V, IC= -50mA 80 IC=-10 mA, IB=-0.25mA -0.06 -0.25 V Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB=-1.25mA -0.12 -0.55 V IC=-10 mA, IB=-0.25mA -0.6 -0.85 V Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-1.25mA -0.68 -1.05 V VCE=

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