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2N5401(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V Collector cut-off current ICBO VCB= -120 V, IE=0 -50 nA Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA hFE(1) VCE= -5V, IC=-1 mA 80 DC current gain hFE(2) VCE= -5V, IC= -10 mA 60 240 hFE(3) VCE= -5V, IC=-50 mA 50 Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5 mA -1 V VCE=-5V, IC=-10mA Transition frequency fT f =30MHz 100 300 MHz