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File name:ktc4378.pdf
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Descr: . Electronic Components Datasheets Active components Transistors HT Semiconductor ktc4378.pdf
Group:Electronics > Components > Transistors
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KTC4378 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES High voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 A Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A hFE(1) VCE=2V,IC=0.05A 100 320 DC current gain hFE(2) VCE=2V,IC=1A 30 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V Transition frequency fT VCE=10V,IC=50mA 150 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz

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