LGE 2sc1623 sot-23 free download

File name 2sc1623_sot-23.pdf

2SC1623 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A DC current gain hFE VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V Transition frequency fT VCE=6V,IC=10mA 250 MHz CLASSIFICATION OF hFE Rank L4 L5 L6 L7 Range 90-180 135-270 200-400 300-600 Marking L4 L5 L6 L7 2SC1623 SOT-23 Transistor(NPN) Typical Characteristics