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2SB834(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC =-50mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -7 V Collector cut-off current ICBO VCB=-60V,IE=0 -100 A Emitter cut-off current IEBO VEB=-7V,IC=0 -100 A hFE(1)* VCE=-5V,IC=-500mA 60 200 DC current gain hFE(2)* VCE=-5V,IC=-3A 20 Collector-emitter saturation voltage VCE(sat)* IC=-3A,IB=-0.3A -1 V Base-emitter voltage VBE* VCE=-5V,IC=-500mA -1 V Transition frequency fT VCE=-5V,IC=-500mA, f=1MHz 9 MHz Turn-on Time