LGE ktc3197 free download

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KTC3197(NPN) TO-92 Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High Gain: Gpe=33dB(Typ) (f=45MHZ). Good linearity of hFE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector power dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 4 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=3V,IC=0 0.1 A DC current gain hFE VCE=12.5V,IC=12.5mA 20 200 Collector-emitter saturation voltage VCE(sat) IC=15mA,IB=1.5mA 0.2 V Base-Emitter saturation voltage VBE(sat) IC=15mA,IB=1.5mA 1.5 V Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 0.8 2 pF Collector-base time constant Cc.rbb VCB=10V,IE=-1mA, f=30MHZ 25 pS Transition frequency fT VCE=12.5V,IC=12.5mA 300 MHZ Power gain Gpe VCE=12.5V,IE=12.5mA, f=45MHZ 28 36 dB KTC3197(NPN) TO-92 Transistors Typical Characteristics