LGE mmdt3904 free download

File name mmdt3904.pdf

MMDT3904 SOT-363 Dual Transistor(NPN) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.05 A Emitter cut-off current IEBO VEB=5V,IC=0 0.05 A hFE(1) VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 DC current gain hFE(3) VCE=1V,IC=10mA 100 300 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V Base-emitter saturation voltage VBE(sat)2 IC=50mA,IB=5mA 0.95 V Transitio