HT Semiconductor 2sa1162 free download

File name 2sa1162.pdf

2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Current -Continuous -150 mA PD Collector Power Dissipation 150 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100u A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA DC current gain hFE VCE=-6V,IC=-2mA 70 400 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V Transition frequency fT VCE=-10V,IC=-1mA 80 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF