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File name: | hn1b01f_071101.pdf [preview hn1b01f 071101] |
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Mfg: | Toshiba |
Model: | hn1b01f 071101 🔎 |
Original: | hn1b01f 071101 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Toshiba hn1b01f_071101.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 12-06-2020 |
User: | Anonymous |
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File name hn1b01f_071101.pdf HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) JEDEC JEITA TOSHIBA 2-3N1A Weight: 0.015 g (typ.) Q1 Absolute Maximum Ratings (Ta = 25 |
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