Samsung kse350 free download

File name kse350.pdf

KSE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE TO-126 HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complement to KSE340 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter- Base Voltage VEBO -5 V Collector Current IC -500 mA ) Collector Dissipation (T c=25 PC 20 W Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (T C=25 ) Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage VCEO(sus) IC = - 1mA, IB = 0 -300 V Collector Cutoff Current ICBO VCB = - 300V, IE = 0 -100 uA Emitter Cutoff Current IEBO VBE = - 3V, Ic = 0 -100 uA DC Current Gain hFE VCE = - 10V, IC = - 50mA 30 240 KSE350 PNP EPITAXIAL SILICON TRANSISTOR