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Electronic components, integrated circuits, semiconductor - datasheets and schematics| File information: | |
| File name: | hn4b01je.pdf [preview hn4b01je] |
| Size: | 310 kB |
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| Mfg: | Toshiba |
| Model: | hn4b01je 🔎 |
| Original: | hn4b01je 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Toshiba hn4b01je.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 14-06-2020 |
| User: | Anonymous |
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File name hn4b01je.pdf HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity 1.BASE1 (B1) : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) Q1 Absolute Maximum Ratings (Ta = 25 | ||
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