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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors KEC kmb6d0ns30qa.pdf
Group:Electronics > Components > Transistors
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SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. The MOSFET and Schottky diode are isolated inside the T package. It is mainly suitable for portable equipment and SMPS. D P G L U A FEATURES DIM MILLIMETERS VDSS=30V, ID=6A. A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 Drain-Source ON Resistance. 8 5 B2 _ 6.02 + 0.3 RDS(ON)=28m (Max.) @VGS=10V D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 RDS(ON)=42m (Max.) @VGS=4.5V 1 H _

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