File information: | |
File name: | kmb6d0ns30qa.pdf [preview kmb6d0ns30qa] |
Size: | 407 kB |
Extension: | |
Mfg: | KEC |
Model: | kmb6d0ns30qa 🔎 |
Original: | kmb6d0ns30qa 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors KEC kmb6d0ns30qa.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 14-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name kmb6d0ns30qa.pdf SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. The MOSFET and Schottky diode are isolated inside the T package. It is mainly suitable for portable equipment and SMPS. D P G L U A FEATURES DIM MILLIMETERS VDSS=30V, ID=6A. A _ 4.85 + 0.2 B1 _ 3.94 + 0.2 Drain-Source ON Resistance. 8 5 B2 _ 6.02 + 0.3 RDS(ON)=28m (Max.) @VGS=10V D _ 0.4 + 0.1 B1 B2 G 0.15+0.1/-0.05 RDS(ON)=42m (Max.) @VGS=4.5V 1 H _ |
Date | User | Rating | Comment |