KEC kf4n20lw free download

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SEMICONDUCTOR KF4N20LW N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 1A Drain-Source ON Resistance : RDS(ON)=1.05 (max) @VGS =10V Qg(typ.) =2.9nC Vth(Max.)= 2V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS 20 V @TC=25 1* ID Drain Current @TC=100 0.6* A Pulsed (Note1) IDP 4* Single Pulsed Avalanche Energy EAS 52 mJ (Note 2) Repetitive Avalanche Energy EAR 0.2 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 5.5 V/ns (Note 3) Drain Power TA=25 2.2* W PD Dissipation Derate above25 0.018 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to- RthJA 57* /W Ambient * : Surface Mounted on FR4 Board (40mm 40mm, 1.0t) PIN CONNECTION 2010. 8. 18 Revision No : 0 1/6 KF4N20LW ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 200 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.2 - V/ Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 2.0 V Gate Leakage Current IGSS VGS= 20V, VDS=0