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STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID STD17N05 50 V < 0.085 17 A STD17N06 60 V < 0.085 17 A s TYPICAL RDS(on) = 0.06 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 s 2 3 s LOW GATE CHARGE 1 1 s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED IPAK DPAK CHARACTERIZATION TO-251 TO-252 s THROUGH-HOLE IPAK (TO-251) POWER (Suffix "-1") (Suffix "T4") PACKAGE IN TUBE (SUFFIX "-1") s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD17N05 STD17N06 VD S Drain-source Voltage (V GS = 0) 50 60 V V DG R Drain- gate Voltage (R GS = 20 k) 50 60 V V GS Gate-source Voltage