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BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS( on) ID BUZ11A 50 V < 0.055 27 A s TYPICAL RDS(on) = 0.048 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE 3 s HIGH CURRENT CAPABILITY 2 1 s 175oC OPERATING TEMPERATURE APPLICATIONS TO-220 s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VD S Drain-source Voltage (V GS = 0) 50 V V DG R Drain- gate Voltage (R GS = 20 k) 50 V V GS Gate-source Voltage