Samsung ksc2500 free download

File name ksc2500.pdf

KSC2500 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER LOW SATURATION TO-92L ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Collector-Emitter Voltage VCBO 10 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 2 A %Collector Current (Pulse) IC 5 A Base Current IB 0.5 A Collector Dissipation mW & PC 900 Junction Temperature TJ 150 Storage Temperature T STG -55 ~150 & %PW 10ms, Duty Cycle 30% 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Cut-off Current ICBO VCB=30V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA Collector-Emitter Breakdown Voltage BVCBO IC=10mA, IB=0 10 V Emitter Base Breakdown Voltage BVEBO IE=1mA, IC=0 6 V DC Current Gain hFE 1 VCE=1V, IC=0.5A 140 600 hFE 2 VCE=1V, IC=2A 70 200 Collector Emitter Saturation Voltage VCE (sat) IC=2A, IB=50mA 0.2 0.5 V Base Emitter On Voltage VBE (on) VCE=1V, IC=2A 0.86 1.5 V Current Gain Bandwidth Product fT VCE=1V, IC=0.5A 150 MHz Output Capacitance COB VCB=10V, IE=0, f=1MHz 27 pF hFE(1) CLASSIFICATION Classification A B C D hFE(1) 140-240 200-330 300-450 420-600 KSC2500 NPN EPITAXIAL SILICON