HT Semiconductor 2sa812 free download

File name 2sa812.pdf

2SA8 1 2 SOT-23 TRANSISTOR(PNP) 1. BASE Unit : mm FEATURES 2. EMITTER Complementary to 2SC1623 3. COLLECTOR High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V Collector cut-off current ICBO VCB=- 60 V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A DC current gain hFE VCE=- 6V, IC= -1mA 90 600 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter voltage VBE IC=-1mA, VCE=-6V -0.58 -0.68 V Transition frequency fT VCE=-6V, IC= -10mA 180 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF CLASSIFICATION OF hFE Rank M4 M5