LGE ksa1175 free download

File name ksa1175.pdf

KSA1175 TO-92S Transistor (PNP) TO-92S 1. EMITTER 2. COLLECTOR 123 3. BASE Features Collector-Base Voltage : VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A DC current gain hFE VCE=-6V, IC=-1mA 40 700 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA B -0.3 V Base-emitter voltage VBE VCE=-6V, IC=-1mA -0.5 -0.8 V Transition frequency fT VCE=-6V, IC=-10mA 50 MHz Collector output capacitance Cob VCB=-10V, IE=0,f=1MHz 2.8 pF VCE=-6V, IC=-0.3mA, Noise figure NF 20 dB f=100HZ, Rg=10K CLASSIFICATION OF hFE Rank R O Y G L Range